? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c36a i dm t c = 25 c, pulse width limited by t jm 108 a i ar t c = 25 c36a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 3 ? p d t c = 25 c 540 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque(to-247) 1.13/10 nm/lb.in. f c mounting force (plus220) 20..120/4.5..15 n/lb weight to-247 6 g to-268 5 g plus220 2 g to-3p 5.5 g ds99228e(01/06) polarhv tm power mosfet n-channel enhancement mode avalanche rated ixth 36n50p ixtq 36n50p ixtt 36n50p ixtv 36n50p ixtv 36n50ps v dss = 500 v i d25 = 36 a r ds(on) 170 m ? ? ? ? ? symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 170 m ? pulse test, t 300 s, duty cycle d 2 % g = gate d = drain s = source tab = drain features l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect to-247 (ixth) (tab) to-268 (ixtt) g s d (tab) g s d plus220 (ixtv) to-3p (ixtq) g d s (tab) plus220 smd(ixtv..s) d (tab) d (tab) g s
ixys reserves the right to change limits, test conditions, and dimensions. ixth 36n50p ixtq 36n50p ixtt 36n50p ixtv36n50p ixtv 36n50ps ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 23 36 s c iss 5500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 510 pf c rss 40 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 27 ns t d(off) r g = 3 ? (external) 75 ns t f 21 ns q g(on) 85 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 30 nc q gd 31 nc r thjc 0.23 c/w r thcs (to-247 and to-3p) 0.21 c/w (plus220) 0.21 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 36 a i sm repetitive 108 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s 400 ns v r = 100 v, v gs = 0 v fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12141618 202224 v d s - volts i d - amperes v gs = 10v 8v 5.5v 5v 6v 6.5v 7v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 28 32 36 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v 5.5v characteristic curves
? 2006 ixys all rights reserved ixth 36n50p ixtq 36n50p ixtt 36n50p ixt v36n50p ixtv 36n50ps fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 28 32 36 02 46 810121416 v d s - volts i d - amperes v gs = 10v 7v 6v 4.5v 5v 5.5v fig. 4. r ds(on ) norm alize d to i d = 18a value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 36a i d = 18a v gs = 10v fig. 6. drain current vs. case tem perature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alize d to i d = 18a value vs. drain current 0.6 1 1.4 1.8 2.2 2.6 3 3.4 0 1020304050607080 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 7. input adm ittance 0 5 10 15 20 25 30 35 40 45 50 55 44.5 55.5 66.5 7 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 102030405060708090 i d - amperes g f s - siemens t j = -40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. ixth 36n50p ixtq 36n50p ixtt 36n50p ixtv36n50p ixtv 36n50ps fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100 q g - nanocoulombs v g s - volts v ds = 250v i d = 18a i g = 10ma fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25s fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
? 2006 ixys all rights reserved to-247 ad (ixth) outline terminals: 1 - gate 2 - drain 3 - source to-268 (ixtt) outline ixth 36n50p ixtq 36n50p ixtt 36n50p ixtv 36n50p ixtv 36n50ps plus220smd (ixtv_s) outline plus220 (ixtv) outline to-3p (ixtq) outline 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
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